GA21型氧化硅基底單層石墨烯(10mmX10mm)X4片 氧化硅基底單層石墨烯膜 CVD SiO2/Si基底單層石墨烯薄膜

描述：                                                                                             

● 光透過(guò)率：> 97%

● 覆蓋率：> 95%

● 厚度：0.345 nm

● 氧化鋁基底FET電子遷移率：2000 cm²/Vs

● 300nm氧化硅/硅基底霍爾電子遷移率：4000 cm²/Vs

● 方阻：450±40 Ω／□

● 晶粒尺寸：達(dá)到10μm                                                                                   

● GA21型CVD氧化硅基底單層石墨烯薄膜的尺寸：(10mmX10mm)X4片。

● 有特殊要求的用戶(hù)可訂制。

SiO2/Si基底規(guī)格：

● 氧化硅厚度：300nm±5%

● 晶型/摻雜劑：P型/B

● 晶向：<100>

● 電阻率：<0.005 Ω-cm

● 晶片厚度：525μm±20μm

● 上表面：拋光

● 背表面：腐蝕

● 粒子：<10@0.3μm

Monolayer Graphene produced by CVD on copper catalyst and transferred to a SiO2/Si substrate using wet transfer process.

應(yīng)用領(lǐng)域：

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and Bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS

● GA21型氧化硅基底單層石墨烯的拉曼光譜：